EFFECT OF VELOCITY/FIELD CHARACTERISTICS ON THE OPERATION OF AVALANCHE-DIODE OSCILLATORS.CULSHAW B; GIBLIN RA.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 14; PP. 285-286; BIBL. 1 REF.Article

HIGH-EFFICIENCY MICROWAVE OSCILLATIONS THAT USE NEW 4-LAYER STRUCTURE.CULSHAW B; GIBLIN RA.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 3; PP. 27-29; BIBL. 3 REF.Article

AVALANCHE DIODE OSCILLATORS. I. BASIC CONCEPTS.CULSHAW B; GIBLIN RA; BLAKEY PA et al.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 5; PP. 577-632; BIBL. 33 REF.Article

LARGE-SIGNAL TIME-DOMAIN MODELING OF AVALANCHE DIODESBLAKEY PA; GIBLIN RA; SEEDS AJ et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 11; PP. 1718-1728; BIBL. 25 REF.Article

CRITERION FOR THE OPTIMUM PUNCHTHROUGH FACTOR OF GALLIUM-ARSENIDE IMPATT DIODES.BLAKEY PA; CULSHAW B; GIBLIN RA et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 11; PP. 284-286; BIBL. 8 REF.Article

DESIGN CRITERIA FOR GALLIUM ARSENIDE HIGH EFFICIENCY AVALANCHE DIODES.CULSHAW B; BLAKEY PA; GIBLIN RA et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 355-366; BIBL. 8 REF.Conference Paper

AVALANCHE DIODE OSCILLATORS. III. DESIGN AND ANALYSIS: THE FUTURE.CULSHAW B; GIBLIN RA; BLAKEY PA et al.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 40; NO 6; PP. 521-568; BIBL. 26 REF.Article

EFFICIENCY ENHANCEMENT IN AVALANCHE DIODES BY DEPLETION-REGION-WIDTH MODULATION.BLAKEY PA; CULSHAW B; GIBLIN RA et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 21; PP. 435-436; BIBL. 3 REF.Article

COMPREHENSIVE MODELS FOR THE ANALYSIS OF HIGH-EFFICIENCY GAAS IMPATT'SBLAKEY PA; CULSHAW B; GIBLIN RA et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 674-682; BIBL. 28 REF.Article

EQUAL-AREAS RULE FOR GALLIUM-ARSENIDE AVALANCHE DIODES.CARROLL JE; CULSHAW B; GIBLIN RA et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 15; PP. 316-318; BIBL. 6 REF.Article

AVALANCHE DIODE OSCILLATORS. II. CAPABILITIES AND LIMITATIONS.CULSHAW B; GIBLIN RA; BLAKEY PA et al.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 39; NO 2; PP. 121-172; BIBL. 1 P. 1/2Article

COMPUTER SIMULATION OF INSTABILITY AND NOISE IN HIGH-POWER AVALANCHE DEVICESGIBLIN RA; SCHERER EF; WIERICH RL et al.1973; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 4; PP. 404-418; BIBL. 28 REF.Serial Issue

AVALANCHE DIODE MODELLING.GIBLIN RA; CULSHAW B; BLAKEY PA et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 343-354; BIBL. 1 P. 1/2Conference Paper